sot-23 n?channel gate esd protection, features ? low gate voltage threshold(vgs(th))to facilitate drive circuit design ? esd protected gate ? applications ? level shifters ? level switches ? portable applications marking diagram drain gate source ? low side load switches 1 3 2 3 drain 1 gate 2 source tr8 tr8 = specific device code m = month code device package shipping ordering information 2n4003nl t1 sot?23 3000/tape & reel maximum ratings (t j = 25 c unless otherwise noted) parameter symbol value unit drain?to?source v oltage v dss 30 v gate?to?source v oltage v gs 20 v continuous drain current (note 1) steady state t a = 25 c i d 0.5 a t a = 85 c 0.37 power dissipation (note 1) steady state p d 0.69 w continuous drain current (note 1) t < 10 s t a = 25 c i d 0.56 a t a = 85 c 0.40 power dissipation (note 1) t < 5 s p d 0.83 w pulsed drain current t p = 10 s i dm 1.7 a operating junction and storage temperature t j , tstg ?55 to 150 c source current (body diode) i s 1.0 a lead temperature for soldering purposes (1/8 from case for 10 s) t l 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. thermal resistance ratings parameter symbol max unit junction?to?ambient ? steady state (note 1) r ja 180 c/w junction?to?ambient ? t < 10 s (note 1) r ja 150 junction?to?ambient ? steady state (note 2) r ja 300 1. surface?mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [1 oz] including traces). 2. surface?mounted on fr4 board using the minimum recommended pad size. ? low gate charge for fast switching ? minimum breakdown voltage rating of 30 v m 2012-10 willas electronic corp. 2n4003nl t1 small signal mosfet 30v,0.56a, single, sot-23
electrical characteristics (t j = 25 c unless otherwise specified) parameter symbol test condition min typ max units off characteristics drain?to?source breakdown voltage v (br)dss v gs = 0 v, i d = 100 a 30 v drain?to?source breakdown voltage temperature coefficient v (br)dss /t j 40 mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = 30 v t j = 25 c 1.0 a gate?to?source leakage current i gss v ds = 0 v, v gs = 10 v 1.0 a on characteristics (note 3) gate threshold voltage v gs(th) v gs = v ds , i d = 250 a 0.8 1.6 v negative threshold temperature coefficient v gs(th) /t j 3.4 mv/ c drain?to?source on resistance r ds(on) v gs = 4.0 v, i d = 10 ma 1.0 1.5 v gs = 2.5 v, i d = 10 ma 1.5 2.0 forward transconductance g fs v ds = 3.0 v, i d = 10 ma 0.33 s charges and capacitances input capacitance c iss v gs = 0 v, f = 1.0 mhz, v ds = 5.0 v 21 pf output capacitance c oss 19.7 reverse transfer capacitance c rss 8.1 total gate charge q g(tot) v gs = 5.0 v, v ds = 24 v, i d = 0.1 a 1.15 nc threshold gate charge q g(th) 0.15 gate?to?source gate charge q gs 0.32 gate?to?drain charge q gd 0.23 switching characteristics (note 4) turn?on delay time t d(on) v gs = 4.5 v, v dd = 5.0 v, i d = 0.1 a, r g = 50 16.7 ns rise time t r 47.9 turn?off delay time t d(off) 65.1 fall time t f 64.2 source?drain diode characteristics forward diode voltage v sd v gs = 0 v, i s = 10 ma t j = 25 c 0.65 0.7 v t j = 125 c 0.45 reverse recovery time t rr v gs = 0 v, di s /dt = 8a/ s, i s = 10 ma 14 ns 3. pulse test: pulse width 300 s, duty cycle 2%. 4. switching characteristics are independent of operating junction temperatures. 2012-10 willas electronic corp. small signal mosfet 30v,0.56a, single, sot-23 2n4003nl t1
typical performance curves (t j = 25 c unless otherwise noted) 0 v ds , drain?to?source voltage (v) i d, drain current (a) 0 figure 1. on?region characteristics 14 1.6 0.8 2 0 0 figure 2. transfer characteristics v gs , gate?to?source voltage (v) figure 3. on?resistance vs. gate?to?source voltage i d, drain current (amps) i d, drain current (a) ?50 0 ?25 25 1.40 1.20 1.00 0.80 50 125100 figure 4. on?resistance vs. drain current and temperature t j , junction temperature ( c) 1 75 150 1 0 figure 5. on?resistance variation with temperature 2 2.5 v 0.4 0.8 1.2 1.2 3 1.80 1.60 03 0 v ds, drain?to?source voltage (volts) 1000 10 100 10 15 t j = 150 c t j = 125 c 5 v gs = 0 v 0.60 20 25 1.6 3.5 v 4 v 4.5 v 0.4 t j = 125 c t j = ?55 c t j = 25 c figure 6. drain?to?source leakage current vs. voltage 2 0 6 4 10 8 2.4 2.8 3.2 3.6 4 r ds(on), drain?to?source resistance ( ) v gs , gate?to?source voltage (v) v gs = 10 v to 5 v i d = 0.2 a 0.8 0.6 0.4 0.2 0 0.1 0.2 0.3 0.4 0.5 0.6 v gs = 10 v t j = 125 c t j = ?55 c t j = 25 c i d = 0.3 a v gs = 4.5 v r ds(on), drain?to?source resistance ( ) 5 r ds(on), drain?to?source resistance ( ) (normalized) i dss , leakage (na) v ds 10 v 2012-10 willas electronic corp. 2n4003nl t1 small signal mosfet 30v,0.56a, single, sot-23
typical performance curves (t j = 25 c unless otherwise noted) 08 30 20 10 0 20 drain?to?source voltage (v) c, capacitance (pf) 0 4 1 0 q g , total gate charge (nc) v gs, gate?to?source voltage (v ) c oss t j = 25 c i d = 0.1 a 50 2 3 40 5 12 0.4 1 .2 0.001 v sd , source?to?drain voltage (v) i s , source current (a) 0.8 1 figure 7. capacitance variation figure 8. gate?to?source & drain?to?source voltage vs. total charge figure 9. diode forward voltage vs. current 4 0.8 0.4 0.6 16 c rss c iss t j = 25 c v gs = 0 v 0.1 0.01 t j = 150 c t j = 25 c v gs = 0 v 2012-10 willas electronic corp. 2n4003nl t1 small signal mosfet 30v,0.56a, single, sot-23
sot - 23 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 2012-10 willas electronic corp. 2n4003nl t1 small signal mosfet 30v,0.56a, single, sot-23 dimensions in inches and (millimeters) .080(2.04) .070(1.78) .110(2.80) .086(2. 1 0) .006(0.15)min. .008(0.20) .003(0.08) .055(1.40) .035(0.89) .020(0.50) .012(0.30) .004(0.10)max. .122(3.10) .106(2.70) .063(1.60) .047(1.20)
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